Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistor

US7799682B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Sven Beyer · Dresden, DE
• Patrick Press · Dresden, DE
• Thomas Feudel · Radebeul, DE

Key dates

• Filing date: Apr 9, 2007
• Grant date: Sep 21, 2010
• Expiry date: May 2, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0137
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

By performing a silicidation process on the basis of a patterned dielectric layer, such as an interlayer dielectric material, the respective metal silicide portions may be provided in a highly localized manner at the respective contact regions, while the overall amount of metal silicide may be significantly reduced. In this way, a negative influence of the stress of metal silicide on the channel regions of field effect transistors may be significantly reduced, while nevertheless maintaining a low contact resistance.