Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory
US7800095B2 · kind B2 · utility
31Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2007 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Feb 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a phase-change memory device including a phase-change material pattern of which strips are shared by neighboring cells. The phase-change memory device includes a plurality of bottom electrodes arranged in a matrix array. The phase-change material pattern is formed on the bottom electrodes, and the strips of the phase-change material pattern are electrically connected to the bottom electrodes. Each strip of the phase-change material pattern is connected to at least two diagonally neighboring bottom electrodes of the bottom electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.