Patent · US Active

Test structure for OPC-related shorts between lines in a semiconductor device

US7800106B2 · kind B2 · utility

7Cited by
24References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 11, 2007
Grant dateSep 21, 2010
Priority date
Expiry dateApr 25, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

OPC results may be efficiently evaluated on the basis of a test structure containing a plurality of line features with opposing end portions. Thus, for different line parameters, the effect of OPC may be determined for a given critical tip-to-tip distance by determining the leakage behavior of the test assemblies, each having different design parameter values for line width and lateral distance between adjacent lines.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.