Semiconductor devices
US7800130B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2006 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Apr 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor device 10 comprises a heterojunction between a lower semiconductor layer 26 made of p-type gallium nitride and an upper semiconductor layer 28 made of n-type AlGaN, wherein the upper semiconductor layer 28 has a larger band gap than the lower semiconductor layer 26. The semiconductor device 10 further comprises a drain electrode 32 formed on a portion of a top surface of the upper semiconductor layer 28, a source electrode 34 formed on a different portion of the top surface of the upper semiconductor layer 28, and a gate electrode 36 electrically connected to the lower semiconductor layer 26. The semiconductor device 10 can operate as normally-off.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.