Substrate temperature control in an ALD reactor
US7806983B2 · kind B2 · utility
20Cited by
27References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2004 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Mar 29, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. An electrostatic chuck (ESC) retains the substrate. A backside gas increases thermal coupling between the substrate and the ESC. The ESC is cooled via a coolant flowing through a coolant plate and heated via a resistive heater. Various arrangements are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.