Methods for plasma matching between different chambers and plasma stability monitoring and control
US7813895B2 · kind B2 · utility
6Cited by
19References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 27, 2007 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Jul 7, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2003/2866
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods for matching semiconductor plasma processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in a sample chamber. Measuring the plasma attributes during process perturbations allows for the correlation of process parameters to the plasma optical emission spectra. The process parameters can then be adjusted to yield a processed substrate which matches that of the reference chamber. Methods for monitoring the stability of a plasma processing chamber using a calibrated spectrometer are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.