Selective deposition of silicon-containing films
US7816236B2 · kind B2 · utility
36Cited by
74References
34Claims
0Family size
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Key dates
| Filing date | Jan 30, 2006 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Mar 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.