Surface treatment of inter-layer dielectric
US7816253B2 · kind B2 · utility
5Cited by
6References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 23, 2006 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Sep 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When an interconnect structure is built on porous ultra low k (ULK) material, the bottom of the trench and/or via is usually damaged by a following metallization process which may be suitable for dense higher dielectric materials. Embodiment of the present invention may provide a method of forming an interconnect structure on an inter-layer dielectric (ILD) material. The method includes steps of treating an exposed area of said ILD material to create a densified area, and metallizing said densified area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.