Method of two dimensional feature model calibration and optimization
US7820341B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2007 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Jan 22, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/68
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity corr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.