Patent · US Active

Method for producing a photomask, method for patterning a layer or layer stack and resist stack on a mask substrate

US7820343B2 · kind B2 · utility

1Cited by

3References

11Claims

0Family size

Assignee

ADVANCED MASK TECHNOLOGY CENTER GMBH & CO. KG · DE

Inventors

Markus Waiblinger · Dresden, DE
Axel Feicke · Chemnitz, DE
Timo Wandel · Hersbruck, DE

Key dates

Filing date	Oct 25, 2007
Grant date	Oct 26, 2010
Priority date	—
Expiry date	Nov 29, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/30
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Methods for producing a photomask or layer or stack patterning include applying two resists to a layer, a layer stack, or a mask substrate (collectively “the layer”). Sensitivity of the first resist with respect to the exposure dose is greater than sensitivity of the second. Both resists are subjected to an exposure dose in defined regions of the layer surface, the dose varying locally between first and second doses. The first dose is chosen to expose the first resist but not the second. The second dose is chosen to expose the second resist. After a first development of the second and of the first resist the layer is etched at the uncovered locations for a first time. After complete removal of the second resist and a second development of the first resist, the layer is etched. As a result, it is possible to produce structures of different depths in the layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.