Patent · US Active

Method of forming front contacts to a silicon solar cell without patterning

US7820472B2 · kind B2 · utility

0Cited by

3References

22Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Peter G. Borden · Mountain View, US
John O. Dukovic · Pleasantville, US
Li Xu · San Jose, US

Key dates

Filing date	Nov 13, 2008
Grant date	Oct 26, 2010
Priority date	—
Expiry date	Apr 10, 2029

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/50
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method for forming front contacts on a silicon solar cell which includes texture etching the front surface of the solar cell, forming an antireflective layer over the face, diffusing a doping material into the face to form a heavily doped region in valleys formed during the texture-etching of the face, depositing an electrically conductive material on the heavily doped regions in the valleys and annealing the solar cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.