Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate MOS transistor
US7820523B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2004 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Jun 1, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention concerns a micro-electronic device comprising a substrate, a first insulating zone and a second insulating zone laying on said substrate, a first active zone comprising at least one layer made of a first semi-conductor crystalline material, resting on said first insulating zone which insulates it from the substrate, at least one second active zone comprising at least one layer in a second semi-conductor crystalline material, laying on said second insulating zone which insulates it from the substrate, said first semi-conductor crystalline material having a different composition from that of the second semi-conductor crystalline material and/or different crystalline orientation from that of the second semi-conductor crystalline material and/or mechanical strains from that of the second semi-conductor crystalline material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.