Method for removing a passivation layer prior to depositing a barrier layer in a copper metallization layer

US7820536B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Holger Schuehrer · Dresden, DE
• Tobias Letz · Dresden, DE
• Frank Koschinsky · Radebeul, DE

Key dates

• Filing date: Aug 31, 2006
• Grant date: Oct 26, 2010
• Expiry date: Jan 31, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76843
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

By forming a thin passivation layer after the formation of openings connecting to a highly reactive metal region, any queue time effects may be significantly reduced. Prior to the deposition of a barrier/adhesion layer, the passivation layer may be efficiently removed on the basis of a heat treatment so as to initiate material removal by evaporation.