Curing methods for silicon dioxide multi-layers
US7825044B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2010 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Jun 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer filling a portion of a trench on the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may further include depositing additional silicon oxide over the cured silicon oxide to fill the trench. The methods may also include removing the acidic vapor from the semiconductor processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.