Method and apparatus for reading and programming a non-volatile memory cell in a virtual ground array
US7826267B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2008 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | May 28, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5612
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for dynamic programming and dynamic reading of a select non-volatile memory cell in a virtual grounds array is disclosed. In the dynamic read operation the global bit lines and the associated local bit lines are connected to a precharged voltage. One of the first or second global bit lines is connected to a low voltage such as ground, wherein the one global bit line connected to ground also connects to the local bit line for sensing the select non-volatile memory cell. The state of the select non-volatile memory cell is detected by detecting the sense amplifier connected to the global bit line, other than the one global bit line. In a dynamic programming operation, the first and second global bit lines and their associated local bit lines are precharged to a first voltage. One of the first or second global bit line and its associated local bit lines is connected to a second voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.