Methods of uniformity control for low flow process and chamber to chamber matching
US7829145B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2008 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Oct 22, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45574
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the method for processing a substrate includes delivering a processing gas into a chemical vapor deposition chamber through a first gas pathway that includes flow through a first plurality of apertures in a blocker plate, the blocker plate creating a pressure drop of at least approximately 0.8 torr thereacross, reacting the processing gas to deposit a material on a substrate surface, removing the substrate from the chamber, delivering a cleaning gas into the chamber through a second gas pathway around the blocker plate bypassing the blocker plate and through a second plurality of apertures formed in the blocker plate, and reacting the cleaning gases with deposits within the chamber to etch the deposits from the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.