Method to modulate coverage of barrier and seed layer using titanium nitride
US7829456B2 · kind B2 · utility
1Cited by
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20Claims
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Key dates
| Filing date | Oct 23, 2008 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Dec 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for processing substrates are provided herein. In some embodiments, a method for processing substrates includes providing to a process chamber a substrate comprising an exposed dielectric layer having a feature formed therein. A mask layer comprising titanium nitride may be selectively deposited atop corners of the feature. A barrier layer may be selectively deposited atop the mask layer and into a bottom portion of the feature. The barrier layer deposited on the bottom portion of the feature may be etched to redistribute at least a portion of the barrier layer onto sidewalls of the feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.