Integrated circuit including a gate electrode

US7829892B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Richard Luyken · Munich, DE
• Franz Hofmann · Munich, DE
• Lothar Risch · Neubiberg, DE
• Dirk Manger · Dresden, DE
• Wolfgang Roesner · Austin, US
• Till Schloesser · Dresden, DE
• Michael Specht · Munich, DE

Key dates

• Filing date: Oct 29, 2007
• Grant date: Nov 9, 2010
• Expiry date: Aug 10, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6211

Abstract

An integrated circuit including a gate electrode is disclosed. One embodiment provides a transistor including a first source/drain electrode and a second source/drain electrode. A channel is arranged between the first and the second source/drain electrode in a semiconductor substrate. A gate electrode is arranged adjacent the channel layer and is electrically insulated from the channel layer. A semiconductor substrate electrode is provided on a rear side. The gate electrode encloses the channel layer at least two opposite sides.