Memory device with improved data retention
US7830015B2 · kind B2 · utility
1Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2005 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Mar 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present memory device include first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the first and second electrodes and into which ions from the passive layer may be provided, and from which the ions may be provided into the passive layer. The active layer is made up of a base material and an impurity therein. The combined the material and impurity have a lower diffusion coefficient than the base material alone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.