Via bottom contact and method of manufacturing same

US7830019B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kaushik Chanda · Fishkill, US
• Lawrence A. Clevenger · Saratoga Springs, US
• Andrew P. Cowley · Wappingers Falls, US
• Jason P. Gill · Saint Johnsbury Center, US
• Baozhen Li · South Bend, US
• Chih-Chao Yang · Glenmont, US

Key dates

• Filing date: Apr 28, 2009
• Grant date: Nov 9, 2010
• Expiry date: Apr 28, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76886
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further includes forming a via structure in electrical contact with the EM resistive material and the wiring layer. The method results in a structure which prevents an open circuit.