Optical metrology of structures formed on semiconductor wafers using machine learning systems
US7831528B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2009 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Jun 18, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06N20/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A structure formed on a semiconductor wafer is examined by obtaining a first diffraction signal measured using a metrology device. A second diffraction signal is generated using a machine learning system, where the machine learning system receives as an input one or more parameters that characterize a profile of the structure to generate the second diffraction signal. The first and second diffraction signals are compared. When the first and second diffraction signals match within a matching criterion, a feature of the structure is determined based on the one or more parameters or the profile used by the machine learning system to generate the second diffraction signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.