Plasma processing method
US7833429B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2007 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Mar 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing method for a plasma processing apparatus which includes, a gas ring, a bell jar, an antenna, a sample table, a Faraday shield, and an RF power source circuit for supplying a power source voltage to the antenna and the Faraday shield. The RF power source circuit includes an RF power source, an antenna connected with the RF power source, a resonance circuit connected in series with the antenna and supplying a resonance voltage, a detection circuit for detecting the resonance voltage of the resonance circuit, and a comparator circuit for comparing the resonance voltage detected by the detection circuit with a predetermined set value. A RF bias voltage is adjusted based on the result of comparison by the comparison circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.