Technique for forming an isolation trench as a stress source for strain engineering

US7833874B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Kai Frohberg · Meißen, DE
• Patrick Press · Dresden, DE
• Thomas Werner · Radebeul, DE

Key dates

• Filing date: Sep 25, 2006
• Grant date: Nov 16, 2010
• Expiry date: Mar 3, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

By forming a non-oxidizable liner in an isolation trench and selectively modifying the liner within the isolation trench, the stress characteristics of the isolation trench may be adjusted. In one embodiment, a high compressive stress may be obtained by treating the liner with an ion bombardment and subsequently exposing the device to an oxidizing ambient at elevated temperatures, thereby incorporating silicon dioxide into the non-oxidizable material. Hence, an increased compressive stress may be generated within the non-oxidizable layer.