Patent · US Active

Method for producing a semiconductor substrate

US7833877B2 · kind B2 · utility

2Cited by

5References

20Claims

0Family size

Assignee

S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES · FR

Inventors

Konstantin Bourdelle · Castelsarrasin, FR
Carlos Mazure · Austin, US

Key dates

Filing date	Oct 23, 2007
Grant date	Nov 16, 2010
Priority date	—
Expiry date	Feb 17, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/26506
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

This invention relates to a method for producing a substrate by transferring a layer of a material from a donor substrate to a support substrate, and then by removing a part of the layer of material to form the thin layer. The step of removing a part of the layer of material to form the thin layer comprises forming an amorphous layer in a part of the thin layer, and then recrystallizing the amorphous layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.