Patent · US Active

Structure design and fabrication on photomask for contact hole manufacturing process window enhancement

US7838173B2 · kind B2 · utility

2Cited by

5References

22Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Ya Hui Chang · Hengshan, TW
Tsiao-Chen Wu · Hsinchu, TW
Shih-Che Wang · Hsinchu, TW

Key dates

Filing date	Dec 1, 2006
Grant date	Nov 23, 2010
Priority date	—
Expiry date	Nov 23, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/36
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The present disclosure provides a mask. The mask includes a substrate; a first attenuating layer disposed on the substrate, having a first material and a first thickness corresponding to a phase shift; and a second attenuating layer having a second material and disposed on the first attenuating layer. The first and second attenuating layers define a first feature having a first opening extending through the first and second attenuating layers; and a second feature having a second opening extending through the second attenuating layer and exposing the first attenuating layer. One of the first and second features is a main feature and the other one is an assistant feature proximate to the main feature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.