Method for manufacturing a semiconductor device
US7838201B2 · kind B2 · utility
0Cited by
17References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2009 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Apr 8, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A polymer for immersion lithography comprising a repeating unit represented by Formula 1 and a photoresist composition containing the same. A photoresist film formed by the photoresist composition of the invention is highly resistant to dissolution, a photoacid generator in an aqueous solution for immersion lithography, thereby preventing contamination of an exposure lens and deformation of the photoresist pattern by exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.