Methods of manufacturing semiconductor devices and structures thereof
US7838372B2 · kind B2 · utility
17Cited by
2References
22Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | May 22, 2008 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Jan 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
Methods of manufacturing semiconductor devices and structures thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming recesses in a first region and a second region of a workpiece. The first region of the workpiece is masked, and the recesses in the second region of the workpiece are filled with a first semiconductive material. The second region of the workpiece is masked, and the recesses in the first region of the workpiece are filled with a second semiconductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.