Isolation trench with rounded corners for BiCMOS process
US7846789B2 · kind B2 · utility
4Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2007 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | Apr 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising a first transistor device on or in a semiconductor substrate and a second transistor device on or in the substrate. The device further comprises an insulating trench located between the first transistor device and the second transistor device. At least one upper corner of the insulating trench is a rounded corner in a lateral plane of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.