Methods for forming a titanium nitride layer
US7846824B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2008 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | May 31, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7685
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for forming titanium nitride layers are provided herein. In some embodiments, a method of forming a titanium nitride layer on a substrate may include providing a substrate into a processing chamber having a target comprising titanium disposed therein; supplying a nitrogen-containing gas into the processing chamber; sputtering a titanium source material from the target in the presence of a plasma formed from the nitrogen-containing gas to deposit a titanium nitride layer on the substrate; and upon depositing the titanium nitride layer to a desired thickness, forming a magnetic field that biases ions in the processing chamber away from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.