Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7855401B2 · kind B2 · utility
92Cited by
28References
31Claims
0Family size
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Key dates
| Filing date | Aug 28, 2007 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | May 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved field effect transistor formed in the Group III nitride material system includes a two part structure in which a chemical vapor deposited passivation layer of silicon nitride encapsulates a previously sputtered-deposited layer of silicon nitride. The sputtered layer provides some of the benefits of passivation and the chemical vapor deposited layer provides an excellent environmental barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.