Patent · US Active

Bevel etcher with gap control

US7858898B2 · kind B2 · utility

321Cited by
12References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 26, 2007
Grant dateDec 28, 2010
Priority date
Expiry dateOct 29, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/335
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.