Methods for manufacturing high dielectric constant film
US7871942B2 · kind B2 · utility
6Cited by
8References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2008 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Mar 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.