Method for the planar joining of components of semiconductor devices and a diffusion joining structure

US7874475B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Khalil Hosseini · Weihmichl, DE
• Joachim Mahler · Regensburg, DE
• Edmund Riedl · Bergneustadt, DE
• Ivan Galesic · Regensburg, DE
• Konrad Roesl · Teublitz, DE

Key dates

• Filing date: Dec 7, 2006
• Grant date: Jan 25, 2011
• Expiry date: Oct 3, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/19043
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for the planar joining of components of semiconductor devices involves coating the components with diffusion materials on their upper sides and rear sides, respectively. Subsequently, the components to be joined one on the other are introduced into a reducing atmosphere. The components are aligned and a compressive pressure is exerted on the aligned components. While heating up the components to be joined in the reducing atmosphere to a diffusion joining temperature, isothermal solidification takes place, the diffusion joining temperature lying below the melting temperature of the forming diffusion joint of the joined material.