Patent · US Active

Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection

US7879250B2 · kind B2 · utility

2Cited by
6References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 5, 2007
Grant dateFeb 1, 2011
Priority date—
Expiry dateApr 10, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/3065
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.