Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structure

US7879709B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Frank Feustel · Dresden, DE
• Tobias Letz · Dresden, DE
• Carsten Peters · Dresden, DE

Key dates

• Filing date: Apr 1, 2008
• Grant date: Feb 1, 2011
• Expiry date: Dec 3, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor structure comprises a semiconductor substrate. A layer of an electrically insulating material is formed over the semiconductor substrate. An electrically conductive feature is formed in the layer of electrically insulating material. A first layer of a semiconductor material is formed between the electrically conductive feature and the layer of electrically insulating material.