Thin film etching method and semiconductor device fabrication using same
US7879732B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2007 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Sep 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for etching a thin film and fabricating a semiconductor device includes etching the thin film on a substrate, while monitoring the removal of an endpoint detection layer remotely located from the substrate, such that precise control of the thin film etching is provided by monitoring the removal of the endpoint detection layer. The endpoint detection layer is formed on a surface of an etching apparatus that is exposed to the same etching conditions as the thin film to be etched. The etching of the thin film is stopped when a predetermined amount of the endpoint detection layer has removed from the surface of the etching apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.