Patent · US Active

Semiconductor chip comprising a metal coating structure and associated production method

US7880300B2 · kind B2 · utility

3Cited by

8References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Michael Bauer · Nittendorf, DE
Alfred Haimerl · Sinzing, DE
Angela Kessler · Regensburg, DE
Joachim Mahler · Regensburg, DE
Wolfgang Schober · Amberg, DE

Key dates

Filing date	Mar 28, 2007
Grant date	Feb 1, 2011
Priority date	—
Expiry date	Mar 28, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor chip (1) has a metal coating structure (2) which has on an active upper side (3) of the semiconductor chip (1) at least one lower metal layer (8) with copper or copper alloy, on which a central metal layer (9) with nickel is arranged. The metal coating structure (2) is terminated by an upper metal layer (10) of palladium and/or a precious metal. The central metal layer (9) with nickel and/or nickel phosphide has a rough interface (11) with respect to the plastic package molding compound surrounding the metal coating structure (2).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.