Method of reducing the surface roughness of a semiconductor wafer
US7883628B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2005 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Feb 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reducing the roughness of a free surface of a semiconductor wafer that includes establishing a first atmosphere in an annealing chamber, replacing the first atmosphere with a second atmosphere that includes a gas selected to and in an amount to substantially eliminate or reduce pollutants on a wafer, and exposing the free surface of the wafer to the second atmosphere to substantially eliminate or reduce pollutants thereon. The second atmosphere is then replaced with a third atmosphere that includes pure, and rapid thermal annealing is performed on the wafer exposed to the third atmosphere in the annealing chamber to substantially reduce the roughness of the free surface of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.