Thin film deposition
US7884032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2005 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Jan 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system, method and apparatus is capable of producing layers of various materials stacked on one another on a substrate without exposing the substrate to the pressure and contaminants of ambient air until the stack is complete. In one aspect, the stack of layers can include both an insulative layer of one or more insulative films, and a conductive metal layer of one or more conductive metal layer films. In another aspect, a bias signal of positive and negative voltage pulses may be applied to a target of a deposition chamber to facilitate deposition of the target material in a suitable fashion. In yet another aspect, one or more of the deposition chambers may have associated therewith a pump which combines a turbomolecular pump and a cryogenic pump to generate an ultra high vacuum in that chamber. Other features are described and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.