Composition and method for low temperature deposition of silicon-containing films
US7887883B2 · kind B2 · utility
13Cited by
13References
8Claims
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Assignee
Inventors
Key dates
| Filing date | May 11, 2010 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | May 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.