Continuous plane of thin-film materials for a two-terminal cross-point memory

US7888711B2 · kind B2 · utility

Assignee

• UNITY SEMICONDUCTOR · US

Inventors

• Robin Cheung · Cupertino, US
• Darrell Rinerson · Cupertino, US
• Travis Byonghyop Oh · San Jose, US
• Jonathan Bornstein · Cupertino, US
• David Hansen · Hillsboro, US

Key dates

• Filing date: Jun 21, 2010
• Grant date: Feb 15, 2011
• Expiry date: Jun 21, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/903

Abstract

A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.