Patent · US Active

Passive temperature compensation of silicon MEMS devices

US7889030B2 · kind B2 · utility

12Cited by

3References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Florian Schoen · Altdorf, DE
Robert Gruenberger · Nandlstadt, DE
Mohsin Nawaz · Itasca, US
Bernhard Winkler · Birkenfeld, DE

Key dates

Filing date	Aug 7, 2008
Grant date	Feb 15, 2011
Priority date	—
Expiry date	Aug 5, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH03H9/2457
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

The invention relates to MEMS devices. In one embodiment, a micro-electromechanical system (MEMS) device comprises a resonator element comprising a semiconducting material, and at least one trench formed in the resonator element and filled with a material comprising oxide. Further embodiments comprise additional devices, systems and methods.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.