Patent · US Active

Semiconductor process

US7892935B2 · kind B2 · utility

1Cited by
7References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 30, 2006
Grant dateFeb 22, 2011
Priority date
Expiry dateNov 8, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/0223
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor process is provided. The semiconductor process includes providing a substrate. Then, a surface treatment is performed to the substrate to form a buffer layer on the substrate. Next, a first pre-amorphous implantation is performed to the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.