Threshold voltage consistency and effective width in same-substrate device groups

US7892939B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Roland Hampp · Bad Abbach, DE
• Manfred Eller · Wappingers Falls, US
• Jin-Ping Han · Fishkill, US
• Matthias Lipinski · Poughkeepsie, US

Key dates

• Filing date: Mar 6, 2008
• Grant date: Feb 22, 2011
• Expiry date: May 24, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76278
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The prevention of active area loss in the STI model is disclosed which results in an improved device performance in devices manufactured according to the process flow. The process generally shared among the multiple various embodiments inverts the current conventional STI structure towards a process flow where an insulator is patterned with tapered trenches. A segregation layer is formed beneath the surface of the insulator in the tapered trenches. The tapered trenches are then filled with a semiconductor material which is further processed to create a number of active devices. Therefore, the active devices are created in patterned dielectric instead of the STI being created in the semiconductor substrate of the active devices.