Field plate trench transistor and method for producing it

US7893486B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Franz Hirler · Isen, DE
• Walter Rieger · Arnoldstein, AT
• Thorsten Meyer · Regensburg, DE
• Wolfgang Klein · Zorneding, DE
• Frank Pfirsch · Birkenfeld, DE

Key dates

• Filing date: Jan 7, 2009
• Grant date: Feb 22, 2011
• Expiry date: Jan 7, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.