Method for transferring a predetermined pattern reducing proximity effects
US7897308B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 5, 2006 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Aug 20, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for transferring a predetermined pattern onto a flat support performed by direct writing by means of a particle beam comprises at least: deposition of a photoresist layer on a free surface of the support, application of the beam on exposed areas of the photoresist layer, performing correction by modulation of exposure doses received by each exposed area, developing of the photoresist layer so as to form said pattern. Correction further comprises determination of a substitution pattern (11) comprising at least one subresolution feature and use of the substitution pattern (11) for determining the areas to be exposed when the electron beam is applied. In addition, modulation takes account of the density of the substitution pattern (11) near to each exposed area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.