Method of manufacturing semiconductor component with gate and shield electrodes in trenches
US7897462B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2008 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Mar 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shielding electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shielding electrodes. The gate electrodes in the trenches in the device region are connected to the gate electrodes in the trenches in the gate contact region. The shielding electrodes in the trenches in the device region are connected to the shielding electrodes in the termination region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.