Block contact architectures for nanoscale channel transistors

US7898041B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Marko Radosavljevic · Portland, US
• Amlan Majumdar · White Plains, US
• Brian S. Doyle · Portland, US
• Jack T. Kavalieros · Portland, US
• Mark L. Doczy · Beaverton, US
• Justin K. Brask · Portland, US
• Uday Shah · Portland, US
• Suman Datta · Beaverton, US
• Robert S. Chau · Beaverton, US

Key dates

• Filing date: Sep 14, 2007
• Grant date: Mar 1, 2011
• Expiry date: Feb 1, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

A contact architecture for nanoscale channel devices having contact structures coupling to and extending between source or drain regions of a device having a plurality of parallel semiconductor bodies. The contact structures being able to contact parallel semiconductor bodies having sub-lithographic pitch.