Method of forming a layer to enhance ALD nucleation on a substrate
US7902064B1 · kind B1 · utility
19Cited by
16References
14Claims
0Family size
Assignee
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Key dates
| Filing date | May 15, 2008 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Apr 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76876
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layer to enhance nucleation of a substrate is described, including a method to form the layer, the method including obtaining a substrate comprising a patterned feature comprising a dielectric region and a conductive region, selectively forming a self-aligned monolayer (SAM) on the dielectric region of the substrate to enhance nucleation process of a first precursor, and depositing the first precursor on the substrate, the precursor to adsorb on the SAM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.