Patent · US Active

Tantalum lanthanide oxynitride films

US7902582B2 · kind B2 · utility

505Cited by

189References

25Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Leonard Forbes · Corvallis, US
Kie Y. Ahn · Chappaqua, US
Arup Bhattacharyya · South Burlington, US

Key dates

Filing date	May 21, 2009
Grant date	Mar 8, 2011
Priority date	—
Expiry date	Sep 1, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Electronic apparatus and methods of forming the electronic apparatus include a tantalum lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The tantalum lanthanide oxynitride film may be structured as one or more monolayers. Metal electrodes may be disposed on a dielectric containing a tantalum lanthanide oxynitride film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.